amplifiers - l ine a r & p ower - sm t 1 HMC952LP5GE v 0 0.1111 gaas phemt mmic 2 watt power amplifier smt with power detector , 9 - 14 ghz functional diagram features high p 1db o utput p ower: +34 dbm high p sat o utput p ower: +35 dbm high gain: 33 db high o utput ip 3: +43 dbm s upply voltage: vdd = +6v @ 1400 ma 50 o hm m atched i nput/ o utput n o external matching required typical applications the h m c952 lp 5g e is ideal for: ? point-to-point radios ? point-to-multi-point radios ? satcom ? military & space general description the h m c952 lp 5g e is a four stage gaas p h em t mmi c m edium p ower amplifer with a temperature compensated on chip power detector which operates between 9 and 14 ghz. the amplifer provides 33 db of gain, +35 dbm of saturated output power, and 27% p a e from a +6v supply. w ith up to +43 dbm ip 3 the h m c952 lp 5g e is ideal for high linearity applications in miltary and space as well as point-to-point and point-to-multi-point radios. the h m c952 lp 5g e amplifer i / o s are internally matched. electrical specifcations, t a = +25 c, vdd1, vdd2, vdd3, vdd4 = +6v, idd = 1400 ma [1] p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 9 - 10 10 - 14 ghz gain [2] 30 33 30 33 db gain variation o ver temperature 0.05 0.05 db/ c i nput r eturn l oss 12 15 db o utput r eturn l oss 9 12 db o utput p ower for 1 db compression ( p 1db) [2] 30.5 33 31.5 34 dbm s aturated o utput p ower ( p sat) [2] 34.5 35 dbm o utput third o rder i ntercept ( ip 3) [2] [3] 42 43 dbm total s upply current 1400 1400 ma [1] adjust vgg between -2 to 0v to achieve i dd = 1400 ma typical. [3] m easurement taken at p out / tone = +20 dbm. [2] board loss subtracted out. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 2 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz output return loss vs. temperature gain & return loss gain vs. temperature p1db vs. temperature input return loss vs. temperature p1db vs supply voltage -30 -20 -10 0 10 20 30 40 8 9 10 11 12 13 14 15 16 s21 s11 s22 frequency (ghz) response (db) 15 20 25 30 35 40 45 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) gain (db) -35 -30 -25 -20 -15 -10 -5 0 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) return loss (db) -30 -25 -20 -15 -10 -5 0 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) return loss (db) 26 28 30 32 34 36 38 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) p1db (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 5v 6v frequency (ghz) p1db (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 3 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz psat vs. supply current psat vs. temperature psat vs. supply voltage output ip3 vs. temperature, pout/tone = +20 dbm p1db vs. supply current output ip3 vs. supply current, pout/tone = +20 dbm 26 28 30 32 34 36 38 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) psat (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 5v 6v frequency (ghz) psat (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 1000 ma 1100 ma 1200 ma 1300 ma 1400 ma frequency (ghz) p1db (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 1000 ma 1100 ma 1200ma 1300ma 1400ma frequency (ghz) psat(dbm) 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) ip3 (dbm) 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 1000 ma 1100 ma 1200 ma 1300 ma 1400 ma frequency (ghz) ip3 (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 4 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz output im3 @ vdd = +6v power compression @ 9.5 ghz output im3 @ vdd = +5v noise figure vs. temperature output ip3 vs. supply voltage, pout/tone = +20 dbm 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 5v 6v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 9.5 ghz 10.5 ghz 11.5 ghz 12.5 ghz 13.5 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 9.5 ghz 10.5 ghz 11.5 ghz 12.5 ghz 13.5 ghz pout/tone (dbm) im3 (dbc) 0 2 4 6 8 10 9 10 11 12 13 14 +25c +85c -40c frequency (ghz) noise figure (db) power compression @ 11.5 ghz 0 5 10 15 20 25 30 35 40 0 400 800 1200 1600 2000 2400 2800 3200 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae idd pout (dbm), gain (db), pae (%) idd (ma) input power (dbm) 0 5 10 15 20 25 30 35 40 0 400 800 1200 1600 2000 2400 2800 3200 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae idd pout (dbm), gain (db), pae (%) idd (ma) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 5 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz gain & power vs. supply current @ 11.5 ghz power dissipation gain & power vs. supply voltage @ 11.5 ghz reverse isolation vs. temperature power compression @ 13.5 ghz detector voltage vs. frequency & temperature -90 -80 -70 -60 -50 -40 -30 -20 -10 0 11 12 13 14 15 16 17 +25c +85c -40c frequency (ghz) isolation (db) 20 24 28 32 36 40 1000 1050 1100 1150 1200 1250 1300 1350 1400 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 20 24 28 32 36 40 5 5.2 5.4 5.6 5.8 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0 2 4 6 8 10 12 -10 -8 -6 -4 -2 0 2 4 6 8 9 ghz 10 ghz 11 ghz 12 ghz 13 ghz 14 ghz power dissipation (w) input power (dbm) 0.001 0.01 0.1 1 10 -10 -6 -2 2 6 10 14 18 22 26 30 34 10 ghz +25c 10 ghz +85c 10 ghz -40c 12 ghz +25c 12 ghz +85c 12 ghz -40c output power (dbm) vref-vdet (v) 0 5 10 15 20 25 30 35 40 0 400 800 1200 1600 2000 2400 2800 3200 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae idd pout (dbm), gain (db), pae (%) idd (ma) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 6 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz absolute maximum ratings drain bias voltage (vdd) +8 vdc gate bias voltage (vgg) -3 - 0 vdc rf i nput p ower ( rfin ) +24 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 137 m w /c above 85 c) 8.9 w thermal r esistance (channel to die bottom) 7. 3 c / w s torage temperature -65 to 150c o perating temperature -55 to 85 c es d s ensitivity (hb m ) class 0, p assed 150v vdd (v) i dd (ma) +5 1400 +6 1400 typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions adjust vgg1 to achieve i dd = 1400 ma outline drawing package information p art n umber p ackage body m aterial l ead f inish msl r ating [2] p ackage m arking [1] h m c952 lp 5g e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 h952 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 7 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz p in n umber f unction description i nterface s chematic 1-3, 9, 10, 14, 17-19, 23, 24 n /c these pins are not connected internally, however all data shown herein was measured with these pins connected to rf /dc ground externally. 4 rfin this pin is dc coupled and matched to 50 o hms. 5, 15 g nd these pins and package bottom must be connected to rf /dc ground. 6-8 vgg1, vgg2, vgg3 gate control for amplifer e xternal bypass capacitors of 100p f , 10n f and 4.7u f are required. 11, 20 -2 2 vdd4, vdd3, vdd2, vdd1 drain bias voltage for amplifer. external bypass capacitors of 100p f , 10n f and 4.7u f are required. 12 vref dc bias of diode biased through external resistor , used for temperature compensation of vdet. s ee application circuit. 13 vdet dc voltage representing rf output power rectifed by diode which is biased through an external resistor. s ee application circut. 16 rfo ut this pin is dc coupled and matched to 50 o hms pin descriptions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 8 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz application circuit for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 9 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hit - tite upon request. evaluation pcb i tem description j1, j2, j5, j6 k connector sri j3, j4 dc p in c2, c3, c9, c12, c14, c16, c17, c19 100 p f capacitor, 0402 p kg. c1, c4, c10, c11, c13, c15, c18, c20 10 n f capacitor, 0402 p kg. c21, c22, c25 - c30 4.7u f capacitor, case a. u1 h m c952 lp 5g e p ower amplifer p cb 600-00163-00 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon fr 4 list of materials for evaluation pcb eval01-HMC952LP5GE [1] for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
amplifiers - l ine a r & p ower - sm t 10 HMC952LP5GE v 0 0.1111 gaas phempt mmic 2 watt power amplifier smt with power detector, 9 - 14 ghz notes: for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com www.datasheet.co.kr datasheet pdf - http://www..net/
|
